BC33716TFR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Max Collector Current :

800mA

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Lead Free :

Lead Free

hFE Min :

100

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

JESD-609 Code :

e3

Gain Bandwidth Product :

100MHz

Max Breakdown Voltage :

45V

Current - Collector Cutoff (Max) :

100nA

Factory Lead Time :

2 Weeks

Transistor Type :

NPN

Max Power Dissipation :

625mW

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Weight :

240mg

Power Dissipation :

625mW

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current Rating :

800mA

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

700mV

Published :

2007

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

45V

Number of Terminations :

3

Base Part Number :

BC337

Frequency :

100MHz

Voltage - Rated DC :

45V

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

45V

Operating Temperature :

150°C TJ

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Number of Pins :

3