BC33716TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

625mW

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

700mV

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Length :

4.58mm

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

10V

Base Part Number :

BC337

Operating Temperature :

150°C TJ

Transistor Type :

NPN

Factory Lead Time :

6 Weeks

REACH SVHC :

No SVHC

Max Collector Current :

800mA

Collector Emitter Breakdown Voltage :

45V

Mount :

Through Hole

Weight :

240mg

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

625mW

Voltage - Rated DC :

45V

Frequency :

100MHz

Current - Collector Cutoff (Max) :

100nA

Terminal Position :

BOTTOM

Height :

4.58mm

Max Breakdown Voltage :

45V

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Current Rating :

800mA

Element Configuration :

Single

Width :

3.86mm

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

100MHz

hFE Min :

100

Published :

2002

Number of Elements :

1

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Pbfree Code :

yes

Packaging :

Tape and Box (TB)

Mounting Type :

Through Hole

Number of Pins :

3