BC33716BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

REACH SVHC :

No SVHC

Length :

4.58mm

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

hFE Min :

60

Frequency :

100MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Max Power Dissipation :

625mW

Lead Free :

Lead Free

Mount :

Through Hole

Number of Terminations :

3

Max Junction Temperature (Tj) :

150°C

Packaging :

Bulk

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

45V

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

45V

Current - Collector Cutoff (Max) :

100nA

Width :

3.86mm

Published :

2017

Weight :

179mg

Contact Plating :

Tin

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Voltage - Rated DC :

45V

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

50V

Max Collector Current :

800mA

Gain Bandwidth Product :

210MHz

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Polarity/Channel Type :

NPN

Collector Emitter Saturation Voltage :

700mV

Height :

5.33mm

Power Dissipation :

625mW

Number of Elements :

1

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Transistor Application :

SWITCHING

Base Part Number :

BC337

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

3

Current Rating :

800mA