BC33716BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2017

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

50V

Pbfree Code :

yes

Number of Elements :

1

Terminal Position :

BOTTOM

Collector Emitter Breakdown Voltage :

45V

Collector Emitter Voltage (VCEO) :

45V

hFE Min :

60

Max Junction Temperature (Tj) :

150°C

Max Collector Current :

800mA

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Length :

4.58mm

Collector Emitter Saturation Voltage :

700mV

Width :

3.86mm

Radiation Hardening :

No

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Packaging :

Bulk

Frequency :

100MHz

Height :

5.33mm

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Pins :

3

Current - Collector Cutoff (Max) :

100nA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Element Material :

SILICON

Base Part Number :

BC337

Max Power Dissipation :

625mW

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Mount :

Through Hole

Contact Plating :

Tin

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

625mW

Voltage - Rated DC :

45V

Transistor Type :

NPN

Number of Terminations :

3

Gain Bandwidth Product :

210MHz

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Factory Lead Time :

14 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Current Rating :

800mA

Weight :

179mg