BC337-40-B0 B1
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- Mfr.Part #
- BC337-40-B0 B1
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92
- Stock
- 44,713
- In Stock ：
- 44,713
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 800 mA
- Package :
- Bulk
- Product Status :
- Obsolete
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Frequency - Transition :
- 100MHz
- Transistor Type :
- NPN
- Series :
- -
- Power - Max :
- 625 mW
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Supplier Device Package :
- TO-92
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA, 5V
- Datasheets
- BC337-40-B0 B1
NPN -55°C ~ 150°C (TJ) 100nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Through Hole
BC337-40-B0 B1 Overview
In this device, the DC current gain is 250 @ 100mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Product comes in the supplier's device package TO-92.There is a 45 V maximal voltage in the device due to collector-emitter breakdown.
BC337-40-B0 B1 Features
the DC current gain for this device is 250 @ 100mA, 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92
BC337-40-B0 B1 Applications
There are a lot of Taiwan Semiconductor
BC337-40-B0 B1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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