BC337-40 A1
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- Mfr.Part #
- BC337-40 A1
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92
- Stock
- 5,633
- In Stock ：
- 5,633
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Power - Max :
- 625mW
- Supplier Device Package :
- TO-92
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 800mA
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2014
- Factory Lead Time :
- 24 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 5V
- Frequency - Transition :
- 100MHz
- Datasheets
- BC337-40 A1
NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC337-40 A1G Overview
In this device, the DC current gain is 250 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Product comes in the supplier's device package TO-92.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BC337-40 A1G Features
the DC current gain for this device is 250 @ 100mA 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92
BC337-40 A1G Applications
There are a lot of Taiwan Semiconductor Corporation
BC337-40 A1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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