BC337-25RLRAG
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- Mfr.Part #
- BC337-25RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92
- Stock
- 15,324
- In Stock ：
- 15,324
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Frequency - Transition :
- 210MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 210MHz
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Voltage (VCEO) :
- 700mV
- Mount :
- Through Hole
- Configuration :
- Single
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Max Collector Current :
- 800mA
- JESD-30 Code :
- O-PBCY-T3
- Power - Max :
- 625mW
- Contact Plating :
- Copper, Silver, Tin
- Max Power Dissipation :
- 625mW
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Datasheets
- BC337-25RLRAG
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC337-25RLRAG Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 210MHz.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BC337-25RLRAG Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 210MHz
BC337-25RLRAG Applications
There are a lot of ON Semiconductor
BC337-25RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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