BC337-25 B1
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- Mfr.Part #
- BC337-25 B1
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92
- Stock
- 15,099
- In Stock ：
- 15,099
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 5V
- Frequency - Transition :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Current - Collector (Ic) (Max) :
- 800mA
- Factory Lead Time :
- 24 Weeks
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 625mW
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Published :
- 2014
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheets
- BC337-25 B1
NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC337-25 B1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC337-25 B1G Features
the DC current gain for this device is 160 @ 100mA 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
BC337-25 B1G Applications
There are a lot of Taiwan Semiconductor Corporation
BC337-25 B1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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