BC337-25-B0 A1
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- Mfr.Part #
- BC337-25-B0 A1
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A TO92
- Stock
- 40,082
- In Stock ：
- 40,082
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 800 mA
- Series :
- -
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA, 5V
- Transistor Type :
- NPN
- Frequency - Transition :
- 100MHz
- Product Status :
- Obsolete
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Power - Max :
- 625 mW
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Supplier Device Package :
- TO-92
- Package :
- Tape and Box (TB)
- Datasheets
- BC337-25-B0 A1
NPN -55°C ~ 150°C (TJ) 100nA (ICBO) TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
BC337-25-B0 A1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA, 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.The product comes in the supplier device package of TO-92.A 45 V maximal voltage - Collector Emitter Breakdown is present in the device.
BC337-25-B0 A1 Features
the DC current gain for this device is 250 @ 100mA, 5V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of TO-92
BC337-25-B0 A1 Applications
There are a lot of Taiwan Semiconductor
BC337-25-B0 A1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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