BC337-25,116

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Mfr.Part #
BC337-25,116
Manufacturer
NXP Semiconductors
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 45V 0.5A TO92-3
Stock
3,300
In Stock :
3,300

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Voltage - Collector Emitter Breakdown (Max) :
45V
Terminal Position :
BOTTOM
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Base Part Number :
BC337
Pin Count :
3
Power Dissipation-Max (Abs) :
0.625W
Number of Elements :
1
Number of Terminations :
3
Published :
2009
JESD-609 Code :
e3
VCEsat-Max :
0.7 V
Polarity/Channel Type :
NPN
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Frequency - Transition :
100MHz
Transistor Element Material :
SILICON
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Configuration :
Single
Power - Max :
625mW
Surface Mount :
No
Terminal Finish :
Matte Tin (Sn)
Transistor Application :
SWITCHING
Transistor Type :
NPN
Peak Reflow Temperature (Cel) :
250
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Transition Frequency :
100MHz
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
JESD-30 Code :
O-PBCY-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector (Ic) (Max) :
500mA
Datasheets
BC337-25,116
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors BC337-25,116 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:BC337, Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), BC337-25,116 pinout, BC337-25,116 datasheet PDF, BC337-25,116 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors BC337-25,116 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BC337-25,116


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

BC337-25,116 Overview


In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.

BC337-25,116 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz


BC337-25,116 Applications


There are a lot of NXP USA Inc.
BC337-25,116 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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