BC337-25,116
- Mfr.Part #
- BC337-25,116
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A TO92-3
- Stock
- 3,300
- In Stock :
- 3,300
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Base Part Number :
- BC337
- Pin Count :
- 3
- Power Dissipation-Max (Abs) :
- 0.625W
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Published :
- 2009
- JESD-609 Code :
- e3
- VCEsat-Max :
- 0.7 V
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Frequency - Transition :
- 100MHz
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Configuration :
- Single
- Power - Max :
- 625mW
- Surface Mount :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 250
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-30 Code :
- O-PBCY-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 500mA
- Datasheets
- BC337-25,116
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC337-25,116 Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 45V.
BC337-25,116 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
BC337-25,116 Applications
There are a lot of NXP USA Inc.
BC337-25,116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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