BC337-16,112

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Terminal Form :

Wire

Voltage - Collector Emitter Breakdown (Max) :

45V

JESD-30 Code :

O-PBCY-W3

Power Dissipation-Max (Abs) :

0.625W

Power - Max :

625mW

Operating Temperature :

150°C TJ

Frequency - Transition :

100MHz

Terminal Finish :

Tin

Transistor Type :

NPN

Qualification Status :

Not Qualified

Number of Elements :

1

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Polarity/Channel Type :

NPN

Packaging :

Bulk

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

250

VCEsat-Max :

0.7 V

Current - Collector Cutoff (Max) :

100nA ICBO

Configuration :

Single

Transition Frequency :

100MHz

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Published :

2009

Number of Terminations :

3

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Surface Mount :

No

Base Part Number :

BC337

JESD-609 Code :

e3