AUIRF9952QTR

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

5mm

Continuous Drain Current (ID) :

2.3A

Transistor Application :

SWITCHING

Series :

HEXFET®

Element Configuration :

Dual

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2W

FET Type :

N and P-Channel

Radiation Hardening :

No

Max Power Dissipation :

2W

Pulsed Drain Current-Max (IDM) :

16A

Number of Terminations :

8

Width :

4mm

Terminal Form :

Gull wing

Threshold Voltage :

1V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

1 V

Mounting Type :

Surface Mount

Height :

1.5mm

Drain-source On Resistance-Max :

0.1Ohm

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Avalanche Energy Rating (Eas) :

44 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Factory Lead Time :

26 Weeks

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

FET Feature :

Logic Level Gate

Published :

2011

Drain Current-Max (Abs) (ID) :

3.5A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8