AUIRF7379QTR

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

2.5W

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

Width :

4mm

Current - Continuous Drain (Id) @ 25°C :

5.8A 4.3A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

45m Ω @ 5.8A, 10V

Height :

1.5mm

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.045Ohm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Series :

HEXFET®

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

46A

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

FET Type :

N and P-Channel

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Application :

SWITCHING

Nominal Vgs :

1 V

Power Dissipation :

2.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

4.3A

Terminal Form :

Gull wing

Radiation Hardening :

No

Mounting Type :

Surface Mount

Published :

2011

Number of Elements :

2

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Length :

5mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Threshold Voltage :

1V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL