AUIRF7342QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

10ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

Width :

4mm

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Published :

2011

Max Power Dissipation :

2W

Length :

5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Factory Lead Time :

10 Weeks

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

3.4A

Number of Pins :

8

Number of Terminations :

8

Radiation Hardening :

No

FET Type :

2 P-Channel (Dual)

Drain to Source Breakdown Voltage :

-55V

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.5mm

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

43 ns

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

105m Ω @ 3.4A, 10V

Drain-source On Resistance-Max :

0.105Ohm

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Fall Time (Typ) :

22 ns

Avalanche Energy Rating (Eas) :

114 mJ

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, HEXFET®

Mount :

Surface Mount

Terminal Form :

Gull wing

Threshold Voltage :

-1V

Turn On Delay Time :

14 ns

Power Dissipation :

2W