AUIRF7103Q

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Additional Feature :

High Reliability

Pulsed Drain Current-Max (IDM) :

25A

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

50V

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

255pF @ 25V

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

8

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

3A

FET Type :

2 N-Channel (Dual)

Published :

2003

JEDEC-95 Code :

MS-012AA

Avalanche Energy Rating (Eas) :

22 mJ

DS Breakdown Voltage-Min :

50V

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tube

Transistor Element Material :

SILICON

Power - Max :

2.4W

Drain-source On Resistance-Max :

0.13Ohm

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

Current - Continuous Drain (Id) @ 25°C :

3A