APTGT75DH60T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

RoHS Status :

RoHS Compliant

VCEsat-Max :

1.9 V

IGBT Type :

Trench Field Stop

Number of Elements :

2

Max Collector Current :

100A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Asymmetrical Bridge

Number of Terminations :

9

Element Configuration :

Dual

Current - Collector Cutoff (Max) :

250μA

Case Connection :

Isolated

JESD-30 Code :

R-XUFM-X9

Turn On Time :

170 ns

Pin Count :

12

Max Power Dissipation :

250W

Collector Emitter Breakdown Voltage :

600V

Transistor Application :

POWER CONTROL

Mounting Type :

Chassis Mount

NTC Thermistor :

yes

Package / Case :

SP1

Input :

Standard

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Power - Max :

250W

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 75A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

4.62nF

Input Capacitance (Cies) @ Vce :

4.62nF @ 25V

Operating Temperature :

-40°C~175°C TJ

Turn Off Time-Nom (toff) :

310 ns

Factory Lead Time :

22 Weeks

Collector Emitter Voltage (VCEO) :

600V

Terminal Form :

UNSPECIFIED

Mount :

Chassis Mount, Screw, Through Hole

Terminal Position :

UPPER

Published :

2013

ECCN Code :

EAR99

Gate-Emitter Voltage-Max :

20V

Number of Pins :

12

Qualification Status :

Not Qualified