APTGT75DH120T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Modules

Case Connection :

Isolated

Number of Pins :

16

Collector Emitter Voltage (VCEO) :

1.2kV

Current - Collector Cutoff (Max) :

250μA

Max Power Dissipation :

357W

Terminal Position :

UPPER

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 75A

Element Configuration :

Dual

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

1200V

Max Collector Current :

110A

Collector Emitter Breakdown Voltage :

1.2kV

RoHS Status :

RoHS Compliant

Mount :

Chassis Mount, Screw

JESD-30 Code :

R-XUFM-X11

Input Capacitance :

5.34nF

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON

IGBT Type :

Trench Field Stop

Power - Max :

357W

Configuration :

Asymmetrical Bridge

Turn Off Time-Nom (toff) :

610 ns

Number of Terminations :

11

NTC Thermistor :

yes

Pin Count :

25

Number of Elements :

2

Transistor Application :

POWER CONTROL

Input Capacitance (Cies) @ Vce :

5.34nF @ 25V

Input :

Standard

ECCN Code :

EAR99

Package / Case :

SP3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

UNSPECIFIED

Turn On Time :

335 ns

Qualification Status :

Not Qualified

Published :

2012

Polarity/Channel Type :

N-Channel

Factory Lead Time :

36 Weeks