APTGT75DA120T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

12

Max Collector Current :

110A

Max Power Dissipation :

357W

Number of Terminations :

12

Configuration :

Single

Turn On Time :

335 ns

Number of Pins :

1

Terminal Position :

UPPER

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Voltage - Collector Emitter Breakdown (Max) :

1200V

Reach Compliance Code :

Unknown

Turn Off Time-Nom (toff) :

610 ns

Input Capacitance (Cies) @ Vce :

5.34nF @ 25V

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2007

Current - Collector Cutoff (Max) :

250μA

IGBT Type :

Trench Field Stop

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

1.2kV

NTC Thermistor :

yes

Collector Emitter Voltage (VCEO) :

2.1V

Transistor Application :

Motor Control

Package / Case :

SP1

Mounting Type :

Chassis Mount

Gate-Emitter Voltage-Max :

20V

Input :

Standard

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 75A

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Operating Temperature :

-40°C~150°C TJ

Input Capacitance :

5.34nF

Mount :

Chassis Mount

Power - Max :

357W

Qualification Status :

Not Qualified

Terminal Finish :

TIN SILVER COPPER

Terminal Form :

THROUGH-HOLE