APTGT75DA120T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Number of Elements :

1

Turn Off Time-Nom (toff) :

610 ns

Pin Count :

12

NTC Thermistor :

yes

Power - Max :

357W

Collector Emitter Breakdown Voltage :

1.2kV

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 75A

JESD-609 Code :

e1

Package / Case :

SP1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Cies) @ Vce :

5.34nF @ 25V

Turn On Time :

335 ns

Max Collector Current :

110A

Max Power Dissipation :

357W

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

1200V

Mounting Type :

Chassis Mount

Gate-Emitter Voltage-Max :

20V

Number of Pins :

1

IGBT Type :

Trench Field Stop

Terminal Form :

THROUGH-HOLE

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

250μA

Terminal Position :

UPPER

Input :

Standard

RoHS Status :

RoHS Compliant

Transistor Application :

Motor Control

Input Capacitance :

5.34nF

Number of Terminations :

12

Published :

2007

Collector Emitter Voltage (VCEO) :

2.1V

Polarity/Channel Type :

N-Channel

Mount :

Chassis Mount

Configuration :

Single

Terminal Finish :

TIN SILVER COPPER