APTGT75A120D1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Max Power Dissipation :

357W

Input Capacitance (Cies) @ Vce :

5345nF @ 25V

JESD-30 Code :

R-XUFM-X7

Collector Emitter Breakdown Voltage :

1.2kV

Terminal Position :

UPPER

Case Connection :

Isolated

Turn Off Time-Nom (toff) :

830 ns

Max Collector Current :

110A

RoHS Status :

RoHS Compliant

Configuration :

Half Bridge

Collector Emitter Voltage (VCEO) :

2.1V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 75A

Transistor Element Material :

SILICON

Mount :

Chassis Mount

Transistor Application :

Motor Control

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Code :

e1

NTC Thermistor :

No

Power - Max :

357W

Voltage - Collector Emitter Breakdown (Max) :

1200V

Input :

Standard

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

5.345μF

Pin Count :

7

IGBT Type :

Trench Field Stop

Operating Temperature (Max) :

150°C

Current - Collector Cutoff (Max) :

4mA

Number of Elements :

2

Mounting Type :

Chassis Mount

Turn On Time :

390 ns

Number of Terminations :

7

Package / Case :

D1