APTGT50DH60TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Operating Temperature :

-40°C~175°C TJ

Mount :

Chassis Mount

Turn On Time :

170 ns

Collector Emitter Voltage (VCEO) :

1.9V

Max Power Dissipation :

176W

Number of Elements :

2

RoHS Status :

RoHS Compliant

Terminal Form :

UNSPECIFIED

IGBT Type :

Trench Field Stop

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Collector Current :

80A

JESD-609 Code :

e1

Input :

Standard

Package / Case :

SP4

Input Capacitance :

3.15nF

Additional Feature :

AVALANCHE RATED

Current - Collector Cutoff (Max) :

250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn Off Time-Nom (toff) :

310 ns

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 50A

Pbfree Code :

yes

Qualification Status :

Not Qualified

NTC Thermistor :

yes

Mounting Type :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Number of Terminations :

14

Input Capacitance (Cies) @ Vce :

3.15nF @ 25V

Transistor Application :

POWER CONTROL

Case Connection :

Isolated

Pin Count :

14

Power - Max :

176W

Collector Emitter Breakdown Voltage :

600V

Terminal Position :

UPPER

Configuration :

Asymmetrical Bridge

Transistor Element Material :

SILICON

Terminal Finish :

TIN SILVER COPPER

Polarity/Channel Type :

N-Channel