APTGT50DA170TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Voltage - Collector Emitter Breakdown (Max) :

1700V

Collector Emitter Breakdown Voltage :

1.7kV

RoHS Status :

RoHS Compliant

Current - Collector Cutoff (Max) :

250μA

Case Connection :

Isolated

Transistor Application :

POWER CONTROL

Pin Count :

12

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

75A

Input :

Standard

Number of Terminations :

12

Mounting Type :

Chassis Mount

Radiation Hardening :

No

Max Power Dissipation :

312W

Terminal Position :

UPPER

Pbfree Code :

yes

Operating Temperature :

-40°C~150°C TJ

Published :

2006

Turn Off Time-Nom (toff) :

1100 ns

Collector Emitter Voltage (VCEO) :

2.4V

Input Capacitance :

4.4nF

NTC Thermistor :

yes

Package / Case :

SP4

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 50A

Mount :

Chassis Mount, Screw

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

22 Weeks

JESD-609 Code :

e1

Turn On Time :

450 ns

IGBT Type :

Trench Field Stop

Configuration :

Single

Input Capacitance (Cies) @ Vce :

4.4nF @ 25V

Power - Max :

312W

Additional Feature :

AVALANCHE RATED

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Terminal Form :

UNSPECIFIED

ECCN Code :

EAR99

Number of Pins :

4

JESD-30 Code :

R-XUFM-X12