APTGT50DA120D1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Collector Emitter Breakdown Voltage :

1.2kV

Max Collector Current :

75A

Turn Off Time-Nom (toff) :

830 ns

Case Connection :

Isolated

Collector Emitter Voltage (VCEO) :

2.1V

Input Capacitance :

3.6nF

NTC Thermistor :

No

Input :

Standard

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Terminal Finish :

TIN SILVER COPPER

Pin Count :

7

Terminal Position :

UPPER

JESD-30 Code :

R-XUFM-X7

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

7

Mount :

Chassis Mount

Power - Max :

270W

Current - Collector Cutoff (Max) :

5mA

Mounting Type :

Chassis Mount

Operating Temperature (Max) :

150°C

Terminal Form :

UNSPECIFIED

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 50A

Max Power Dissipation :

270W

Input Capacitance (Cies) @ Vce :

3.6nF @ 25V

JESD-609 Code :

e1

IGBT Type :

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max) :

1200V

Pbfree Code :

yes

Number of Elements :

1

Transistor Application :

Motor Control

Turn On Time :

280 ns

Configuration :

Single

Package / Case :

D1