APTGT400A120D3G
- Mfr.Part #
- APTGT400A120D3G
- Manufacturer
- Microchip Technology
- Package / Case
- D-3 Module
- Datasheet
- Download
- Description
- IGBT MODULE 1200V 580A 2100W D3
- Stock
- 25,669
- In Stock :
- 25,669
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Modules
- NTC Thermistor :
- No
- Power - Max :
- 2100W
- Max Power Dissipation :
- 2.1kW
- Terminal Form :
- UNSPECIFIED
- Input :
- Standard
- Number of Terminations :
- 7
- Turn Off Time-Nom (toff) :
- 830 ns
- Pin Count :
- 11
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 400A
- Package / Case :
- D-3 Module
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Input Capacitance :
- 29nF
- Terminal Position :
- UPPER
- Input Capacitance (Cies) @ Vce :
- 29nF @ 25V
- Case Connection :
- Isolated
- VCEsat-Max :
- 2.1 V
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 11
- Operating Temperature :
- -40°C~150°C TJ
- Turn On Time :
- 400 ns
- ECCN Code :
- EAR99
- Transistor Application :
- Motor Control
- Mount :
- Chassis Mount, Screw
- Collector Emitter Breakdown Voltage :
- 1.2kV
- IGBT Type :
- Trench Field Stop
- Configuration :
- Half Bridge
- JESD-30 Code :
- R-XUFM-X7
- Gate-Emitter Voltage-Max :
- 20V
- Published :
- 2012
- Max Collector Current :
- 580A
- Number of Elements :
- 2
- Mounting Type :
- Chassis Mount
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 750µA
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Element Configuration :
- Dual
- Factory Lead Time :
- 36 Weeks
- Datasheets
- APTGT400A120D3G
APTGT400A120D3G datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at
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