APTGT35DA120D1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Collector Emitter Voltage (VCEO) :

2.1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Terminal Form :

UNSPECIFIED

Max Power Dissipation :

205W

Turn Off Time-Nom (toff) :

830 ns

JESD-30 Code :

R-XUFM-X7

Collector Emitter Breakdown Voltage :

1.2kV

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

D1

Transistor Element Material :

SILICON

Terminal Position :

UPPER

Input Capacitance (Cies) @ Vce :

2.5nF @ 25V

Input Capacitance :

2.5nF

Current - Collector Cutoff (Max) :

5mA

RoHS Status :

RoHS Compliant

Power - Max :

205W

Mount :

Chassis Mount

Operating Temperature :

-40°C~150°C TJ

Turn On Time :

280 ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 35A

Transistor Application :

Motor Control

NTC Thermistor :

No

Pin Count :

7

Pbfree Code :

yes

Input :

Standard

Number of Elements :

1

JESD-609 Code :

e1

Published :

2004

Max Collector Current :

55A

Number of Terminations :

7

IGBT Type :

Trench Field Stop

Polarity/Channel Type :

N-Channel

Case Connection :

Isolated

Mounting Type :

Chassis Mount

Voltage - Collector Emitter Breakdown (Max) :

1200V