APTGT30DSK60T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e1

Terminal Position :

UPPER

Pin Count :

25

Number of Elements :

2

NTC Thermistor :

yes

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Cies) @ Vce :

1.6nF @ 25V

RoHS Status :

RoHS Compliant

Gate-Emitter Voltage-Max :

20V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Chassis Mount

Terminal Form :

UNSPECIFIED

Input :

Standard

Input Capacitance :

1.6nF

Additional Feature :

AVALANCHE RATED

Collector Emitter Voltage (VCEO) :

1.9V

Package / Case :

SP3

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~175°C TJ

IGBT Type :

Trench Field Stop

Number of Terminations :

25

Max Power Dissipation :

90W

Collector Emitter Breakdown Voltage :

600V

Mounting Type :

Chassis Mount

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 30A

Transistor Application :

POWER CONTROL

Reach Compliance Code :

Unknown

Case Connection :

Isolated

Configuration :

Dual Buck Chopper

Current - Collector Cutoff (Max) :

250μA

Terminal Finish :

TIN SILVER COPPER

Element Configuration :

Dual

JESD-30 Code :

R-XUFM-X25

Turn Off Time-Nom (toff) :

310 ns

Power - Max :

90W

Turn On Time :

170 ns

Max Collector Current :

50A