APTGT30DDA60T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Input Capacitance (Cies) @ Vce :

1.6nF @ 25V

Input Capacitance :

1.6nF

Collector Emitter Breakdown Voltage :

600V

Reach Compliance Code :

Unknown

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Published :

2006

Terminal Position :

UPPER

Max Power Dissipation :

90W

Pin Count :

25

Turn On Time :

170 ns

IGBT Type :

Trench Field Stop

Number of Terminations :

25

Number of Pins :

3

Case Connection :

Isolated

Power - Max :

90W

Turn Off Time-Nom (toff) :

310 ns

Gate-Emitter Voltage-Max :

20V

JESD-30 Code :

R-XUFM-X25

Mounting Type :

Chassis Mount

Terminal Finish :

TIN SILVER COPPER

Configuration :

Dual Boost Chopper

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Additional Feature :

AVALANCHE RATED

Input :

Standard

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

NTC Thermistor :

yes

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 30A

Collector Emitter Voltage (VCEO) :

1.9V

Operating Temperature :

-40°C~175°C TJ

RoHS Status :

RoHS Compliant

Current - Collector Cutoff (Max) :

250μA

Terminal Form :

UNSPECIFIED

Element Configuration :

Dual

Mount :

Chassis Mount

Qualification Status :

Not Qualified

Package / Case :

SP3

JESD-609 Code :

e1

Max Collector Current :

50A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED