APTGT30DA170T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Collector Emitter Voltage (VCEO) :

2.4V

Terminal Position :

UPPER

Number of Elements :

1

Terminal Finish :

TIN SILVER COPPER

Case Connection :

Isolated

Number of Pins :

1

Gate-Emitter Voltage-Max :

20V

Collector Emitter Breakdown Voltage :

1.7kV

Current - Collector Cutoff (Max) :

250μA

Input Capacitance :

2.5nF

NTC Thermistor :

yes

Package / Case :

SP1

Turn On Time :

170 ns

Turn Off Time-Nom (toff) :

850 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Voltage - Collector Emitter Breakdown (Max) :

1700V

Input Capacitance (Cies) @ Vce :

2.5nF @ 25V

ECCN Code :

EAR99

Configuration :

Single

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

Published :

2012

IGBT Type :

Trench Field Stop

Transistor Application :

Motor Control

Operating Temperature :

-40°C~150°C TJ

Max Collector Current :

45A

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 30A

Mounting Type :

Chassis Mount

Factory Lead Time :

22 Weeks

Power - Max :

210W

Max Power Dissipation :

210W

Number of Terminations :

12

Mount :

Chassis Mount, Screw

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Input :

Standard

Pbfree Code :

yes

Pin Count :

12

Radiation Hardening :

No