APTGT20H60T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Collector Emitter Voltage (VCEO) :

1.9V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

25

Terminal Form :

UNSPECIFIED

IGBT Type :

Trench Field Stop

NTC Thermistor :

yes

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~175°C TJ

Gate-Emitter Voltage-Max :

20V

Terminal Position :

UPPER

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

62W

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 20A

Current - Collector Cutoff (Max) :

250μA

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

62W

Number of Elements :

4

Input :

Standard

Max Collector Current :

32A

Turn On Time :

170 ns

Additional Feature :

AVALANCHE RATED

Published :

2006

Transistor Application :

POWER CONTROL

Reach Compliance Code :

Unknown

Mounting Type :

Chassis Mount

Turn Off Time-Nom (toff) :

310 ns

JESD-609 Code :

e1

Mount :

Chassis Mount

Collector Emitter Breakdown Voltage :

600V

Package / Case :

SP3

Number of Terminations :

25

Input Capacitance :

1.1nF

Input Capacitance (Cies) @ Vce :

1.1nF @ 25V

JESD-30 Code :

R-XUFM-X25

Configuration :

Full Bridge Inverter

Terminal Finish :

TIN SILVER COPPER