APTGT20A60T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Input Capacitance (Cies) @ Vce :

1.1nF @ 25V

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Voltage-Max :

20V

Current - Collector Cutoff (Max) :

250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~175°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Collector Emitter Voltage (VCEO) :

1.9V

Number of Pins :

1

Input Capacitance :

1.1nF

Turn Off Time-Nom (toff) :

310 ns

Mounting Type :

Chassis Mount

Max Collector Current :

32A

Configuration :

Half Bridge

Qualification Status :

Not Qualified

Pin Count :

12

Case Connection :

Isolated

Number of Elements :

2

Number of Terminations :

12

Transistor Element Material :

SILICON

Package / Case :

SP1

Polarity/Channel Type :

N-Channel

Input :

Standard

Mount :

Chassis Mount

JESD-609 Code :

e1

Element Configuration :

Dual

Turn On Time :

170 ns

NTC Thermistor :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Transistor Application :

Motor Control

Max Power Dissipation :

62W

Terminal Form :

THROUGH-HOLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2007

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 20A

Power - Max :

62W

IGBT Type :

Trench Field Stop