APTGT150DA60TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Number of Elements :

1

Number of Terminations :

12

Qualification Status :

Not Qualified

Turn Off Time-Nom (toff) :

370 ns

Transistor Application :

POWER CONTROL

Mount :

Chassis Mount

JESD-609 Code :

e1

Collector Emitter Voltage (VCEO) :

1.9V

Collector Emitter Breakdown Voltage :

600V

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

UPPER

Published :

2006

Operating Temperature :

-40°C~175°C TJ

Configuration :

Single

Polarity/Channel Type :

N-Channel

IGBT Type :

Trench Field Stop

Max Power Dissipation :

480W

Input Capacitance (Cies) @ Vce :

9.2nF @ 25V

JESD-30 Code :

R-XUFM-X12

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

Number of Pins :

4

Current - Collector Cutoff (Max) :

250μA

Terminal Form :

UNSPECIFIED

Case Connection :

Isolated

Additional Feature :

AVALANCHE RATED

Max Collector Current :

225A

Turn On Time :

180 ns

Input :

Standard

NTC Thermistor :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Gate-Emitter Voltage-Max :

20V

Power - Max :

480W

Pin Count :

12

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 150A

Package / Case :

SP4

Terminal Finish :

TIN SILVER COPPER

Input Capacitance :

9.2nF