APTGT100H170G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Modules

Number of Terminations :

12

Number of Pins :

12

Voltage - Collector Emitter Breakdown (Max) :

1700V

Current - Collector Cutoff (Max) :

350μA

IGBT Type :

Trench Field Stop

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Power - Max :

560W

Collector Emitter Voltage (VCEO) :

1.7kV

Turn On Time :

450 ns

Input Capacitance :

9nF

NTC Thermistor :

No

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input :

Standard

Additional Feature :

AVALANCHE RATED

Max Collector Current :

150A

Transistor Application :

POWER CONTROL

Collector Emitter Breakdown Voltage :

1.7kV

Pbfree Code :

yes

Operating Temperature :

-40°C~150°C TJ

Published :

2006

Max Power Dissipation :

560W

Gate-Emitter Voltage-Max :

20V

ECCN Code :

EAR99

Case Connection :

Isolated

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 100A

Mount :

Chassis Mount, Screw

Number of Elements :

4

Factory Lead Time :

36 Weeks

Configuration :

Full Bridge Inverter

JESD-609 Code :

e1

Terminal Form :

UNSPECIFIED

Pin Count :

12

Package / Case :

SP6

Mounting Type :

Chassis Mount

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

1100 ns

VCEsat-Max :

2.4 V

Input Capacitance (Cies) @ Vce :

9nF @ 25V

Transistor Element Material :

SILICON