APTGT100DA170TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

JESD-30 Code :

R-XUFM-X12

Power - Max :

560W

Case Connection :

Isolated

Transistor Application :

POWER CONTROL

Configuration :

Single

Package / Case :

SP4

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Terminal Position :

UPPER

Collector Emitter Breakdown Voltage :

1.7kV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

UNSPECIFIED

Max Collector Current :

150A

Number of Pins :

20

Turn On Time :

450 ns

Current - Collector Cutoff (Max) :

250μA

IGBT Type :

Trench Field Stop

Input Capacitance :

9nF

VCEsat-Max :

2.4 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

NTC Thermistor :

yes

Terminal Finish :

TIN SILVER COPPER

Mount :

Chassis Mount, Screw

Voltage - Collector Emitter Breakdown (Max) :

1700V

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 100A

Input Capacitance (Cies) @ Vce :

9nF @ 25V

Factory Lead Time :

22 Weeks

ECCN Code :

EAR99

Published :

2006

Pin Count :

12

Max Power Dissipation :

560W

JESD-609 Code :

e1

Mounting Type :

Chassis Mount

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

12

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

1.7kV

Turn Off Time-Nom (toff) :

1100 ns

Input :

Standard