APTGT100A60TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

1.9V

Current - Collector Cutoff (Max) :

250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

4

Transistor Application :

POWER CONTROL

Additional Feature :

AVALANCHE RATED

Power - Max :

340W

Mount :

Chassis Mount

Terminal Finish :

TIN SILVER COPPER

Input :

Standard

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

370 ns

Operating Temperature :

-40°C~175°C TJ

Number of Elements :

2

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 100A

Published :

2006

JESD-609 Code :

e1

NTC Thermistor :

yes

Pbfree Code :

yes

Case Connection :

Isolated

Qualification Status :

Not Qualified

Max Collector Current :

150A

Turn On Time :

180 ns

Mounting Type :

Chassis Mount

IGBT Type :

Trench Field Stop

Max Power Dissipation :

340W

Number of Terminations :

12

Polarity/Channel Type :

N-Channel

Input Capacitance (Cies) @ Vce :

6.1nF @ 25V

Terminal Position :

UPPER

Pin Count :

12

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

600V

Input Capacitance :

6.1nF

JESD-30 Code :

R-XUFM-X12

RoHS Status :

RoHS Compliant

Package / Case :

SP4

Configuration :

Half Bridge