APTGF90DH60T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Pin Count :

25

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw

Configuration :

Asymmetrical Bridge

Qualification Status :

Not Qualified

Published :

2009

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 100A

Power - Max :

416W

NTC Thermistor :

yes

Case Connection :

Isolated

Number of Pins :

3

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

180 ns

RoHS Status :

RoHS Compliant

Operating Temperature (Max) :

150°C

ECCN Code :

EAR99

Turn On Time :

36 ns

JESD-30 Code :

R-XUFM-X11

Element Configuration :

Dual

IGBT Type :

NPT

Gate-Emitter Voltage-Max :

20V

Max Collector Current :

110A

Collector Emitter Breakdown Voltage :

600V

Number of Terminations :

11

Collector Emitter Voltage (VCEO) :

2.5V

Polarity/Channel Type :

N-Channel

Input :

Standard

Transistor Application :

POWER CONTROL

Package / Case :

SP3

Terminal Position :

UPPER

Max Power Dissipation :

416W

Input Capacitance (Cies) @ Vce :

4.3nF @ 25V

Number of Elements :

2

Input Capacitance :

4.3nF

Current - Collector Cutoff (Max) :

250μA