APTGF75DA120T1G
- Mfr.Part #
- APTGF75DA120T1G
- Manufacturer
- Microsemi
- Package / Case
- SP1
- Datasheet
- Download
- Description
- IGBT MODULE 1200V 100A 500W SP1
- Stock
- 29,625
- In Stock :
- 29,625
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - IGBTs - Modules
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Input Capacitance :
- 5.1nF
- Number of Terminations :
- 12
- Collector Emitter Voltage (VCEO) :
- 3.7V
- Vce(on) (Max) @ Vge, Ic :
- 3.7V @ 15V, 75A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Pin Count :
- 12
- Number of Pins :
- 1
- Mount :
- Chassis Mount, Screw
- Mounting Type :
- Chassis Mount
- Current - Collector Cutoff (Max) :
- 250μA
- Input :
- Standard
- Gate-Emitter Voltage-Max :
- 20V
- Qualification Status :
- Not Qualified
- NTC Thermistor :
- yes
- Published :
- 2012
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- Turn Off Time-Nom (toff) :
- 390 ns
- Max Collector Current :
- 100A
- Transistor Application :
- Motor Control
- Package / Case :
- SP1
- Configuration :
- Single
- Number of Elements :
- 1
- Power - Max :
- 500W
- Max Power Dissipation :
- 500W
- Terminal Position :
- UPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- N-Channel
- Turn On Time :
- 190 ns
- Case Connection :
- Isolated
- IGBT Type :
- NPT
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Input Capacitance (Cies) @ Vce :
- 5.1nF @ 25V
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- APTGF75DA120T1G
APTGF75DA120T1G datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at
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