APTGF50DU120TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Operating Temperature :

-40°C~150°C TJ

IGBT Type :

NPT

Turn On Time :

100 ns

Mounting Type :

Chassis Mount

Turn Off Time-Nom (toff) :

400 ns

Element Configuration :

Dual

NTC Thermistor :

yes

Input Capacitance (Cies) @ Vce :

3.45nF @ 25V

Case Connection :

Isolated

Current - Collector Cutoff (Max) :

250μA

Collector Emitter Voltage (VCEO) :

3.7V

Power - Max :

312W

Number of Terminations :

12

Qualification Status :

Not Qualified

Terminal Position :

UPPER

Published :

2006

JESD-609 Code :

e1

Transistor Application :

POWER CONTROL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max) :

1200V

Reach Compliance Code :

Unknown

Pin Count :

12

Mount :

Chassis Mount

Max Power Dissipation :

312W

Number of Pins :

4

Terminal Form :

UNSPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

1.2kV

Configuration :

Dual, Common Source

Input :

Standard

Input Capacitance :

3.45nF

Polarity/Channel Type :

N-Channel

Number of Elements :

2

Package / Case :

SP4

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 50A

ECCN Code :

EAR99

Max Collector Current :

75A

JESD-30 Code :

R-XUFM-X12

Moisture Sensitivity Level (MSL) :

1 (Unlimited)