APTGF50A60T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

IGBT Type :

NPT

Configuration :

Half Bridge

VCEsat-Max :

2.45 V

Package / Case :

SP1

Max Power Dissipation :

250W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Input :

Standard

Qualification Status :

Not Qualified

Terminal Position :

UPPER

Pin Count :

12

Case Connection :

Isolated

Turn Off Time-Nom (toff) :

151 ns

Input Capacitance (Cies) @ Vce :

2.2nF @ 25V

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

2

RoHS Status :

RoHS Compliant

Power - Max :

250W

Transistor Element Material :

SILICON

Transistor Application :

Motor Control

Number of Pins :

1

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

65A

Turn On Time :

52 ns

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

250μA

NTC Thermistor :

yes

Collector Emitter Breakdown Voltage :

600V

Number of Terminations :

12

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

600V

Gate-Emitter Voltage-Max :

20V

Input Capacitance :

2.2nF

Published :

2007

Mount :

Chassis Mount, Screw

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1

Vce(on) (Max) @ Vge, Ic :

2.45V @ 15V, 50A

Element Configuration :

Dual