APTGF25DDA120T3G
- Mfr.Part #
- APTGF25DDA120T3G
- Manufacturer
- Microsemi
- Package / Case
- SP3
- Datasheet
- Download
- Description
- IGBT MODULE 1200V 40A 208W SP3
- Stock
- 40,324
- In Stock :
- 40,324
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - IGBTs - Modules
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 25
- Configuration :
- Dual Boost Chopper
- Max Operating Temperature :
- 150°C
- VCEsat-Max :
- 3.7 V
- Number of Terminations :
- 25
- Current - Collector Cutoff (Max) :
- 250μA
- Transistor Application :
- Motor Control
- Max Power Dissipation :
- 208W
- Case Connection :
- Isolated
- Max Collector Current :
- 40A
- Turn Off Time-Nom (toff) :
- 386 ns
- Element Configuration :
- Dual
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Input :
- Standard
- Gate-Emitter Voltage-Max :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- UNSPECIFIED
- Turn On Time :
- 110 ns
- Pbfree Code :
- yes
- JESD-30 Code :
- R-XUFM-X25
- ECCN Code :
- EAR99
- Input Capacitance (Cies) @ Vce :
- 1.65nF @ 25V
- Qualification Status :
- Not Qualified
- Mount :
- Chassis Mount, Screw
- NTC Thermistor :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- UPPER
- Number of Pins :
- 32
- Vce(on) (Max) @ Vge, Ic :
- 3.7V @ 15V, 25A
- Collector Emitter Breakdown Voltage :
- 1.2kV
- IGBT Type :
- NPT
- Input Capacitance :
- 1.65nF
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2012
- Min Operating Temperature :
- -40°C
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Terminal Finish :
- TIN SILVER COPPER
- Mounting Type :
- Chassis Mount
- Number of Elements :
- 2
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- SP3
- Datasheets
- APTGF25DDA120T3G
APTGF25DDA120T3G datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at
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