APT80GA90LD40

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

RoHS Status :

RoHS Compliant

Pin Count :

3

Input Type :

Standard

Td (on/off) @ 25°C :

18ns/149ns

Max Power Dissipation :

625W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn Off Time-Nom (toff) :

320 ns

Number of Elements :

1

Gate Charge :

200nC

Transistor Application :

POWER CONTROL

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 47A

IGBT Type :

PT

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Mounting Type :

Through Hole

Additional Feature :

LOW CONDUCTION LOSS

Switching Energy :

1652μJ (on), 1389μJ (off)

Max Operating Temperature :

150°C

Mount :

Through Hole

ECCN Code :

EAR99

Series :

POWER MOS 8™

Turn On Time :

49 ns

Published :

1999

Reverse Recovery Time :

25 ns

Element Configuration :

Single

Test Condition :

600V, 47A, 4.7 Ω, 15V

Collector Emitter Breakdown Voltage :

900V

Collector Emitter Voltage (VCEO) :

900V

Packaging :

Tube

Min Operating Temperature :

-55°C

Case Connection :

COLLECTOR

Package / Case :

TO-264-3, TO-264AA

Current - Collector Pulsed (Icm) :

239A

JESD-609 Code :

e1

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

145A

Radiation Hardening :

No

Factory Lead Time :

29 Weeks