APT8020B2LLG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

694W

Drain to Source Breakdown Voltage :

800V

Rds On (Max) @ Id, Vgs :

200m Ω @ 19A, 10V

Terminal Finish :

TIN SILVER COPPER

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Rise Time :

14ns

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Package / Case :

TO-247-3 Variant

Gate to Source Voltage (Vgs) :

30V

Width :

20.5mm

RoHS Status :

RoHS Compliant

Vgs (Max) :

±30V

Length :

26.49mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

Mounting Type :

Through Hole

Pbfree Code :

yes

Mount :

Through Hole

Transistor Application :

SWITCHING

Radiation Hardening :

No

ECCN Code :

EAR99

Published :

1997

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

31 Weeks

Transistor Element Material :

SILICON

FET Type :

N-Channel

Height :

5.21mm

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

38A

Turn-Off Delay Time :

39 ns

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

JESD-609 Code :

e1

Number of Terminations :

3

Series :

POWER MOS 7®

Case Connection :

DRAIN

Packaging :

Tube

Drain-source On Resistance-Max :

0.2Ohm

Pin Count :

3

Weight :

10.6g

Current Rating :

38A

Fall Time (Typ) :

9 ns

Voltage - Rated DC :

800V

Power Dissipation-Max :

694W Tc

Terminal Position :

Single

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE