APT8024JLL
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- Mfr.Part #
- APT8024JLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 29A ISOTOP
- Stock
- 13,260
- In Stock ：
- 13,260
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Rise Time :
- 5ns
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 23 ns
- Pin Count :
- 4
- Terminal Position :
- UPPER
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Power Dissipation-Max :
- 460W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 4 ns
- Package / Case :
- SOT-227-4, miniBLOC
- Continuous Drain Current (ID) :
- 29A
- Turn On Delay Time :
- 9 ns
- Terminal Form :
- UNSPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 4
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 14.5A, 10V
- Power Dissipation :
- 460W
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Voltage - Rated DC :
- 800V
- JESD-609 Code :
- e1
- Mount :
- Chassis Mount, Screw
- Published :
- 1997
- Series :
- POWER MOS 7®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4670pF @ 25V
- Current Rating :
- 29A
- Number of Pins :
- 4
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- APT8024JLL
N-Channel Tube 240m Ω @ 14.5A, 10V ±30V 4670pF @ 25V 160nC @ 10V SOT-227-4, miniBLOC
APT8024JLL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4670pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 29A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT8024JLL Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 29A
the turn-off delay time is 23 ns
APT8024JLL Applications
There are a lot of Microsemi Corporation
APT8024JLL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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