APT80GA60LD40

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

143A

Number of Elements :

1

Length :

26.49mm

Case Connection :

COLLECTOR

Mount :

Through Hole

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Weight :

10.6g

Element Configuration :

Single

Packaging :

Tube

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

RoHS Compliant

Factory Lead Time :

33 Weeks

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

600V

Operating Temperature :

-55°C~150°C TJ

Test Condition :

400V, 47A, 4.7 Ω, 15V

Pbfree Code :

yes

Package / Case :

TO-264-3, TO-264AA

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 47A

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Series :

POWER MOS 8™

Collector Emitter Breakdown Voltage :

600V

Radiation Hardening :

No

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

240A

Max Collector Current :

143A

Collector Emitter Saturation Voltage :

2V

Width :

20.5mm

ECCN Code :

EAR99

IGBT Type :

PT

Max Power Dissipation :

625W

Reverse Recovery Time :

22 ns

Gate Charge :

230nC

Turn Off Time-Nom (toff) :

326 ns

Height :

5.21mm

Switching Energy :

840μJ (on), 751μJ (off)

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

23ns/158ns

JESD-609 Code :

e1

Turn On Time :

52 ns

Published :

1999

Additional Feature :

LOW CONDUCTION LOSS