APT80GA60B

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

625W

Switching Energy :

840μJ (on), 751μJ (off)

Turn Off Time-Nom (toff) :

326 ns

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Input Type :

Standard

Pin Count :

3

Packaging :

Tube

Number of Terminations :

3

Gate Charge :

230nC

Width :

5.31mm

Collector Emitter Saturation Voltage :

2V

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Voltage-Max :

30V

Td (on/off) @ 25°C :

23ns/158ns

Gate-Emitter Thr Voltage-Max :

6V

Radiation Hardening :

No

Mounting Type :

Through Hole

Element Configuration :

Single

Additional Feature :

LOW CONDUCTION LOSS

Package / Case :

TO-247-3

Current - Collector Pulsed (Icm) :

240A

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Turn On Time :

52 ns

Mount :

Through Hole

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

143A

Collector Emitter Voltage (VCEO) :

600V

Height :

21.46mm

Weight :

38.000013g

Factory Lead Time :

33 Weeks

Max Collector Current :

143A

Test Condition :

400V, 47A, 4.7 Ω, 15V

Published :

1999

Terminal Finish :

PURE MATTE TIN

Collector Emitter Breakdown Voltage :

600V

IGBT Type :

PT

JEDEC-95 Code :

TO-247AD

Length :

16.26mm

Transistor Application :

POWER CONTROL

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 47A