APT80GA60B

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

2V

RoHS Status :

RoHS Compliant

Pin Count :

3

Polarity/Channel Type :

N-Channel

Length :

16.26mm

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Width :

5.31mm

Number of Terminations :

3

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 47A

Gate Charge :

230nC

Gate-Emitter Voltage-Max :

30V

Max Power Dissipation :

625W

Continuous Collector Current :

143A

Switching Energy :

840μJ (on), 751μJ (off)

Published :

1999

Case Connection :

COLLECTOR

Packaging :

Tube

Radiation Hardening :

No

Transistor Element Material :

SILICON

Weight :

38.000013g

IGBT Type :

PT

Gate-Emitter Thr Voltage-Max :

6V

Td (on/off) @ 25°C :

23ns/158ns

Terminal Finish :

PURE MATTE TIN

Mount :

Through Hole

Package / Case :

TO-247-3

JEDEC-95 Code :

TO-247AD

Collector Emitter Breakdown Voltage :

600V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Nom (toff) :

326 ns

Current - Collector Pulsed (Icm) :

240A

Additional Feature :

LOW CONDUCTION LOSS

Mounting Type :

Through Hole

Height :

21.46mm

Transistor Application :

POWER CONTROL

Turn On Time :

52 ns

Collector Emitter Voltage (VCEO) :

600V

Factory Lead Time :

33 Weeks

Max Collector Current :

143A

JESD-30 Code :

R-PSFM-T3

Test Condition :

400V, 47A, 4.7 Ω, 15V

Input Type :

Standard