APT17ZTR-G1

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Reach Compliance Code :

Compliant

Terminal Form :

THROUGH-HOLE

Max Power Dissipation :

500 mW

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Saturation Voltage :

700 V

Transistor Element Material :

SILICON

JESD-30 Code :

O-PBCY-T3

Configuration :

Single

RoHS :

Compliant

Emitter Base Voltage (VEBO) :

10 V

Max Operating Temperature :

150 °C

Collector-Emitter Voltage-Max :

480V

Max Collector Current :

50 mA

Number of Elements :

1

Terminal Position :

BOTTOM

Collector Emitter Voltage (VCEO) :

480 V

Number of Terminals :

3

Power Dissipation-Max (Abs) :

0.5W

DC Current Gain-Min (hFE) :

20

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Factory Lead Time :

[object Object]

Collector Current-Max (IC) :

0.05A

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Min Operating Temperature :

-55 °C

JEDEC-95 Code :

TO-92

Surface Mount :

No

Operating Temperature (Max) :

150°C

JESD-609 Code :

e3

Contact Plating :

Tin