APT15GP60BDQ1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Series :

POWER MOS 7®

Mount :

Through Hole

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Max Power Dissipation :

250W

Packaging :

Tube

Case Connection :

COLLECTOR

Number of Terminations :

3

Transistor Application :

POWER CONTROL

Gate Charge :

55nC

Current - Collector Pulsed (Icm) :

65A

Radiation Hardening :

No

Switching Energy :

130μJ (on), 120μJ (off)

RoHS Status :

RoHS Compliant

Current Rating :

15A

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

20 ns

JESD-30 Code :

R-PSFM-T3

Collector Emitter Voltage (VCEO) :

600V

Voltage - Rated DC :

600V

Power - Max :

250W

Collector Emitter Breakdown Voltage :

600V

Polarity/Channel Type :

N-Channel

Additional Feature :

LOW CONDUCTION LOSS

Terminal Finish :

TIN SILVER COPPER

Max Collector Current :

56A

Element Configuration :

Single

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Elements :

1

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Turn-Off Delay Time :

29 ns

Factory Lead Time :

30 Weeks

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 15A

Pbfree Code :

yes

JEDEC-95 Code :

TO-247AD

Test Condition :

400V, 15A, 5 Ω, 15V

Turn On Delay Time :

8 ns

IGBT Type :

PT

Turn Off Time-Nom (toff) :

160 ns

Input Type :

Standard

Pin Count :

3

Td (on/off) @ 25°C :

8ns/29ns

Published :

1999