APT15GN120BDQ1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

JESD-609 Code :

e1

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 15A

Collector Emitter Voltage (VCEO) :

1.2kV

IGBT Type :

Trench Field Stop

Turn Off Time-Nom (toff) :

355 ns

Current Rating :

45A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Terminal Finish :

TIN SILVER COPPER

Voltage - Rated DC :

1.2kV

Td (on/off) @ 25°C :

10ns/150ns

Number of Elements :

1

Max Collector Current :

45A

Packaging :

Tube

RoHS Status :

RoHS Compliant

Gate Charge :

90nC

Mounting Type :

Through Hole

Pin Count :

3

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

1.2kV

Polarity/Channel Type :

N-Channel

Input Type :

Standard

Turn On Time :

19 ns

Element Configuration :

Single

Gate-Emitter Voltage-Max :

30V

Switching Energy :

410μJ (on), 950μJ (off)

Published :

1999

Package / Case :

TO-247-3

Transistor Application :

POWER CONTROL

Radiation Hardening :

No

Case Connection :

COLLECTOR

Factory Lead Time :

29 Weeks

JESD-30 Code :

R-PSFM-T3

Gate-Emitter Thr Voltage-Max :

6.5V

Max Power Dissipation :

195W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

800V, 15A, 4.3 Ω, 15V

Mount :

Through Hole

Pbfree Code :

yes