APT150GN60LDQ4G
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- Mfr.Part #
- APT150GN60LDQ4G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- IGBT 600V 220A 536W TO-264L
- Stock
- 39,317
- In Stock ：
- 39,317
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Radiation Hardening :
- No
- Power - Max :
- 536W
- IGBT Type :
- Trench Field Stop
- Collector Emitter Breakdown Voltage :
- 600V
- Turn On Time :
- 154 ns
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Input Type :
- Standard
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Published :
- 1999
- Max Collector Current :
- 220A
- Element Configuration :
- Single
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 600V
- Packaging :
- Tube
- Factory Lead Time :
- 25 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Vce(on) (Max) @ Vge, Ic :
- 1.85V @ 15V, 150A
- Switching Energy :
- 8.81mJ (on), 4.295mJ (off)
- Td (on/off) @ 25°C :
- 44ns/430ns
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Max Power Dissipation :
- 536W
- Terminal Finish :
- TIN SILVER COPPER
- Additional Feature :
- High Reliability
- Case Connection :
- COLLECTOR
- Turn Off Time-Nom (toff) :
- 575 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- POWER CONTROL
- Test Condition :
- 400V, 150A, 1 Ω, 15V
- Package / Case :
- TO-264-3, TO-264AA
- Current - Collector Pulsed (Icm) :
- 450A
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Pbfree Code :
- yes
- Gate-Emitter Voltage-Max :
- 30V
- Polarity/Channel Type :
- N-Channel
- Gate Charge :
- 970nC
- Datasheets
- APT150GN60LDQ4G
APT150GN60LDQ4G datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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