APT150GN60B2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 150A

Factory Lead Time :

24 Weeks

Mounting Type :

Through Hole

Radiation Hardening :

No

Case Connection :

COLLECTOR

Gate Charge :

970nC

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Pin Count :

3

Gate-Emitter Voltage-Max :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW CONDUCTION LOSS, HIGH RELIABILITY

Max Power Dissipation :

536W

IGBT Type :

Trench Field Stop

Operating Temperature :

-55°C~175°C TJ

Turn Off Time-Nom (toff) :

575 ns

Terminal Finish :

TIN SILVER COPPER

Transistor Application :

POWER CONTROL

Packaging :

Tube

JESD-609 Code :

e1

Gate-Emitter Thr Voltage-Max :

6.5V

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Input Type :

Standard

Current - Collector Pulsed (Icm) :

450A

Switching Energy :

8.81mJ (on), 4.295mJ (off)

Turn On Time :

154 ns

Lead Free :

Lead Free

Mount :

Through Hole

Test Condition :

400V, 150A, 1 Ω, 15V

Max Collector Current :

220A

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Voltage (VCEO) :

600V

Number of Terminations :

3

Published :

1999

Td (on/off) @ 25°C :

44ns/430ns

Package / Case :

TO-247-3 Variant

Power - Max :

536W

JEDEC-95 Code :

TO-247AD