APT13GP120BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Pbfree Code :

yes

Element Configuration :

Single

Current - Collector Pulsed (Icm) :

50A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

250W

Test Condition :

600V, 13A, 5 Ω, 15V

Published :

1999

Gate Charge :

55nC

JEDEC-95 Code :

TO-247AD

Collector Emitter Breakdown Voltage :

1.2kV

Lead Free :

Lead Free

Radiation Hardening :

No

Mounting Type :

Through Hole

IGBT Type :

PT

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

POWER CONTROL

Input Type :

Standard

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

9ns/28ns

Collector Emitter Voltage (VCEO) :

1.2kV

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Max Collector Current :

41A

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3

RoHS Status :

RoHS Compliant

Series :

POWER MOS 7®

Number of Terminations :

3

JESD-609 Code :

e1

Turn Off Time-Nom (toff) :

270 ns

Current Rating :

41A

Mount :

Through Hole

Pin Count :

3

Switching Energy :

115μJ (on), 165μJ (off)

Factory Lead Time :

23 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Turn On Time :

21 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Voltage - Rated DC :

1.2kV

Additional Feature :

LOW CONDUCTION LOSS

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 13A