APT13GP120BDQ1G
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- Mfr.Part #
- APT13GP120BDQ1G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 41A 250W TO247
- Stock
- 5,741
- In Stock ：
- 5,741
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Published :
- 1999
- Max Power Dissipation :
- 250W
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Turn On Time :
- 21 ns
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Rated DC :
- 1.2kV
- Td (on/off) @ 25°C :
- 9ns/28ns
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- JESD-30 Code :
- R-PSFM-T3
- Factory Lead Time :
- 33 Weeks
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Current Rating :
- 41A
- Package / Case :
- TO-247-3
- Current - Collector Pulsed (Icm) :
- 50A
- Transistor Application :
- POWER CONTROL
- Series :
- POWER MOS 7®
- Operating Temperature :
- -55°C~150°C TJ
- IGBT Type :
- PT
- Gate-Emitter Voltage-Max :
- 20V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Energy :
- 115μJ (on), 165μJ (off)
- Radiation Hardening :
- No
- Turn Off Time-Nom (toff) :
- 270 ns
- Gate Charge :
- 55nC
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- JEDEC-95 Code :
- TO-247AD
- Test Condition :
- 600V, 13A, 5 Ω, 15V
- Max Collector Current :
- 41A
- Vce(on) (Max) @ Vge, Ic :
- 3.9V @ 15V, 13A
- Gate-Emitter Thr Voltage-Max :
- 6V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Input Type :
- Standard
- Datasheets
- APT13GP120BDQ1G
APT13GP120BDQ1G datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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