APT13005TF-G1

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Mfr.Part #
APT13005TF-G1
Manufacturer
Diodes Incorporated
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 4A TO220-3
Stock
3,616
In Stock :
3,616

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Length :
10.3mm
Max Power Dissipation :
28W
Collector Emitter Breakdown Voltage :
450V
Frequency - Transition :
4MHz
Package / Case :
TO-220-3
Mounting Type :
Through Hole
Operating Temperature :
-65°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Min Operating Temperature :
-65°C
Width :
4.9mm
Height :
16mm
Element Configuration :
Single
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
Collector Emitter Voltage (VCEO) :
900mV
Emitter Base Voltage (VEBO) :
9V
Voltage - Collector Emitter Breakdown (Max) :
450V
Contact Plating :
Tin
Power - Max :
28W
Published :
2017
Max Collector Current :
4A
Vce Saturation (Max) @ Ib, Ic :
900mV @ 1A, 4A
Collector Base Voltage (VCBO) :
10V
Current - Collector (Ic) (Max) :
4A
Mount :
Through Hole
Max Operating Temperature :
150°C
Packaging :
Tube
Factory Lead Time :
15 Weeks
Collector Emitter Saturation Voltage :
900mV
Supplier Device Package :
TO-220-3
Datasheets
APT13005TF-G1
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated APT13005TF-G1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, APT13005TF-G1 pinout, APT13005TF-G1 datasheet PDF, APT13005TF-G1 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated APT13005TF-G1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated APT13005TF-G1


NPN -65°C~150°C TJ TO-220-3 Tube Through Hole

APT13005TF-G1 Overview


DC current gain in this device equals 8 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 900mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 900mV @ 1A, 4A.An emitter's base voltage can be kept at 9V to gain high efficiency.Product comes in TO-220-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 4A volts.

APT13005TF-G1 Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
the supplier device package of TO-220-3


APT13005TF-G1 Applications


There are a lot of Diodes Incorporated
APT13005TF-G1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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